Samsung 4GB Laptop RAM DDR3 1600

Samsung 4Gb DDR3 SDRAM (K4B4G0446D/K4B4G0846D)

Technical Overview

The Samsung 4Gb DDR3 SDRAM represents a high-performance memory solution designed for advanced computing environments. This D-die memory module offers robust performance with multiple speed grades and configurations to meet diverse system requirements.

Key Technical Features

• Memory Density: 4Gb (available in 1Gx4 and 512Mx8 configurations)
• Package: 78-ball FBGA (Fine-Pitch Ball Grid Array)
• Voltage: 1.5V ± 0.075V power supply
• Speed Grades: Supports DDR3-800 to DDR3-2133 speeds
• Burst Length: 8 (with on-the-fly burst chop capability)
• Banks: 8 banks
• Programmable Features:
  • Programmable CAS Latency: 5, 6, 7, 8, 9, 10, 11, 12, 13, 14
  • Programmable Additive Latency: 0, CL-2, or CL-1 clock
  • Programmable CAS Write Latency (CWL): 5-10 depending on speed grade

Ideal Users

The Samsung 4Gb DDR3 SDRAM is perfect for:

• High-Performance Desktop Computers: Users requiring consistent, reliable memory performance
• Enterprise Server Systems: Demanding environments needing stable, high-speed memory
• Workstation Professionals: Graphic designers, engineers, and data analysts who need rapid data access
• Gaming Enthusiasts: Gamers seeking responsive and reliable memory solutions

The module’s flexible speed grades and configurations make it adaptable to various computing needs, from entry-level systems to high-end workstations.

Detailed Technical Specifications

Memory Organization

• 1Gx4 Configuration:
  • 1Gb (1,073,741,824 bits)
  • x4 I/O width
  • 8 banks
• 512Mx8 Configuration:
  • 512Mb (536,870,912 bits)
  • x8 I/O width
  • 8 banks

Performance Characteristics

Speed Grades

Speed Grade	Clock Cycle Time	CAS Latency	Max Transfer Rate
DDR3-800	2.5 ns	6	800 Mb/s
DDR3-1066	1.875 ns	7	1066 Mb/s
DDR3-1333	1.5 ns	9	1333 Mb/s
DDR3-1600	1.25 ns	11	1600 Mb/s
DDR3-1866	1.071 ns	13	1866 Mb/s
DDR3-2133	0.938 ns	14	2133 Mb/s

Advanced Features

• On-Die Termination (ODT)
• Internal self-calibration
• Bi-directional differential data strobe
• 8-bit pre-fetch architecture
• Asynchronous reset
• Lead-free & halogen-free (RoHS compliant)

Environmental Specifications

• Operating Temperature Range: 0°C to 95°C
• Storage Temperature Range: -55°C to +100°C
• Refresh Interval:
  • 7.8 µs (0°C to 85°C)
  • 3.9 µs (85°C to 95°C)

Compatibility and Compliance

• JEDEC standard 1.5V ± 0.075V power supply
• Backward compatible with lower speed grades
• Compliant with DDR3 SDRAM industry specifications

Reliability

The Samsung 4Gb DDR3 SDRAM is engineered with rigorous quality control, ensuring:

• Consistent performance across temperature variations
• Low power consumption
• Minimal signal interference
• Long-term operational stability

Ordering Information

When selecting this memory module, specify:

• Memory density (1Gx4 or 512Mx8)
• Speed grade (DDR3-800 to DDR3-2133)
• Specific model number (K4B4G0446D or K4B4G0846D)

Note: Specifications subject to change without prior notice. Always consult the latest datasheet for the most current information.